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AOD458
250V,14A N-Channel MOSFET
General Description
The AOD458 has been fabricated using an advanced high
Product Summary
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC -DC
applications.By providing low R DS(on) , C iss and C rss along
with guaranteed avalanche capability this device can be
V DS
I D (at V GS =10V)
R DS(ON) (at V GS =10V)
300V@150 ℃
14A
<0.28 ?
adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
100% UIS Tested!
100% R g Tested!
TO252
Top View
DPAK
Bottom View
D
D
D
G
S
S
G
G
S
Absolute Maximum Ratings T A =25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
Maximum
250
±30
Units
V
V
Current
Continuous Drain
B
Pulsed Drain Current
C
T C =25°C
T C =100°C
I D
I DM
14
10
32
A
Avalanche Current
C
I AR
3.4
A
Repetitive avalanche energy
C
E AR
173
mJ
Single pulsed avalanche energy
Peak diode recovery dv/dt
H
E AS
dv/dt
346
5
mJ
V/ns
Derate above 25 C
W/ C
Power Dissipation B
T C =25°C
o
P D
150
1
W
o
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T J , T STG
T L
-50 to 175
300
°C
°C
Thermal Characteristics
Parameter
Symbol
Typical
Maximum
Units
Maximum Junction-to-Ambient
A,G
R θ JA
45
55
°C/W
Maximum Case-to-sink
A
R θ CS
-
0.5
°C/W
Maximum Junction-to-Case D,F
Rev0: April 2011
R θ JC
www.aosmd.com
0.7
1
°C/W
Page 1 of 6
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相关代理商/技术参数
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